Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs sacm avalanche photodiodes
Identifieur interne : 00A027 ( Main/Repository ); précédent : 00A026; suivant : 00A028Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs sacm avalanche photodiodes
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Abstract
It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth product.
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Wang</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Texas at Austin</s1><s2>TX 78713</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName></affiliation></author><author><name sortKey="Zheng, X G" uniqKey="Zheng X">X. G. Zheng</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>JDS Uniphase</s1><s2>San Jose, CA 95134</s2><s3>USA</s3><sZ>3 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>JDS Uniphase</wicri:noRegion></affiliation></author><author><name sortKey="Li, X" uniqKey="Li X">X. Li</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Texas at Austin</s1><s2>TX 78713</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName></affiliation></author><author><name>NING LI</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Texas at Austin</s1><s2>TX 78713</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName></affiliation></author><author><name sortKey="Campbell, Joe C" uniqKey="Campbell J">Joe C. Campbell</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Texas at Austin</s1><s2>TX 78713</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Texas</region></placeName><orgName type="university">Université du Texas à Austin</orgName><placeName><settlement type="city">Austin (Texas)</settlement><region type="state">Texas</region></placeName></affiliation></author><author><name>CHAD WANG</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of California at Santa Barbara</s1><s2>CA 93106</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name sortKey="Coldren, Larry A" uniqKey="Coldren L">Larry A. Coldren</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of California at Santa Barbara</s1><s2>CA 93106</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">05-0234249</idno><date when="2005">2005</date><idno type="stanalyst">PASCAL 05-0234249 INIST</idno><idno type="RBID">Pascal:05-0234249</idno><idno type="wicri:Area/Main/Corpus">00A263</idno><idno type="wicri:Area/Main/Repository">00A027</idno></publicationStmt><seriesStmt><idno type="ISSN">0018-9197</idno><title level="j" type="abbreviated">IEEE j. quantum electron.</title><title level="j" type="main">IEEE journal of quantum electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bandwidth</term><term>Electric field</term><term>Experimental study</term><term>Impact ionization</term><term>Indium Aluminium Arsenides</term><term>Indium Gallium Arsenides</term><term>Optoelectronic device</term><term>Photodiode</term><term>Semiconductor device</term><term>Ternary compound</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Ionisation choc</term><term>Photodiode</term><term>Dispositif optoélectronique</term><term>Indium Gallium Arséniure</term><term>Dispositif semiconducteur</term><term>Indium Aluminium Arséniure</term><term>Composé ternaire</term><term>Champ électrique</term><term>Largeur bande</term><term>Etude expérimentale</term><term>InGaAs</term><term>As Ga In</term><term>8560D</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche photodiodes is critical to achieve low excess noise and high gain bandwidth product.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0018-9197</s0></fA01><fA02 i1="01"><s0>IEJQA7</s0></fA02><fA03 i2="1"><s0>IEEE j. quantum electron.</s0></fA03><fA05><s2>41</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs sacm avalanche photodiodes</s1></fA08><fA11 i1="01" i2="1"><s1>NING DUAN</s1></fA11><fA11 i1="02" i2="1"><s1>WANG (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZHENG (X. G.)</s1></fA11><fA11 i1="04" i2="1"><s1>LI (X.)</s1></fA11><fA11 i1="05" i2="1"><s1>NING LI</s1></fA11><fA11 i1="06" i2="1"><s1>CAMPBELL (Joe C.)</s1></fA11><fA11 i1="07" i2="1"><s1>CHAD WANG</s1></fA11><fA11 i1="08" i2="1"><s1>COLDREN (Larry A.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Texas at Austin</s1><s2>TX 78713</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>JDS Uniphase</s1><s2>San Jose, CA 95134</s2><s3>USA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>University of California at Santa Barbara</s1><s2>CA 93106</s2><s3>USA</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>568-572</s1></fA20><fA21><s1>2005</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222K</s2><s5>354000125089830130</s5></fA43><fA44><s0>0000</s0><s1>© 2005 INIST-CNRS. 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